APTGV15H120T3G APTGV15H120T3G ? rev 0 june, 2007 www.microsemi.com 1-9 these devices are sensitiv e to electrostatic discharge. proper ha nding procedures should be followe d. see application note apt0502 on www.microsemi.com q3 11 10 q1 cr1 7 22 13 14 cr3 3 30 29 32 18 19 23 8 15 31 r1 16 4 cr4 cr2 q2 q4 26 27 top switches : trench + field stop igbt ? bottom switches : fast npt igbt ? 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32 trench & field stop ? igbt q1, q3: v ces = 1200v ; i c = 15a @ tc = 80c fast npt igbt q2, q4: v ces = 1200v ; i c = 15a @ tc = 80c application ? solar converter features ? q2, q4 (fast non punch through (npt) igbt) - switching frequency up to 50 khz - rbsoa & scsoa rated - low tail current ? q1, q3 (trench & field stop igbt ? ) - low voltage drop - switching frequency up to 20 khz - rbsoa & scsoa rated - low tail current ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? optimized conduction & switching losses ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive t c of v cesat ? rohs compliant full - bridge npt & trench + field stop ? igbt power module
APTGV15H120T3G APTGV15H120T3G ? rev 0 june, 2007 www.microsemi.com 2-9 all ratings @ t j = 25c unless otherwise specified 1. top switches 1.1 top trench + field stop igbt ? characteristics absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 25 i c continuous collector current t c = 80c 15 i cm pulsed collector current t c = 25c 30 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 115 w rbsoa reverse bias safe operation area t j = 125c 30a @ 1150v electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 250 a t j = 25c 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 15a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 0.6ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 1100 c res reverse transfer capacitance v ge = 0v, v ce = 25v f = 1mhz 90 pf t d(on) turn-on delay time 90 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 15a r g = 62 ? 80 ns t d(on) turn-on delay time 90 t r rise time 30 t d(off) turn-off delay time 520 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 15a r g = 62 ? 120 ns t j = 25c 1.15 e on turn-on switching energy t j = 125c 1.5 t j = 25c 1.15 e off turn-off switching energy v ge = 15v v bus = 600v i c = 15a r g = 62 ? t j = 125c 1.8 mj r thjc junction to case thermal resistance 1.3 c/w
APTGV15H120T3G APTGV15H120T3G ? rev 0 june, 2007 www.microsemi.com 3-9 1.2 top fast diode characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 100 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 15 a i f = 15a 2.8 3.3 i f = 30a 3.4 v f diode forward voltage i f = 15a t j = 125c 2.4 v t j = 25c 240 t rr reverse recovery time t j = 125c 290 ns t j = 25c 260 q rr reverse recovery charge i f = 15a v r = 800v di/dt =200a/s t j = 125c 960 nc r thjc junction to case thermal resistance 2 c/w 2. bottom switches 2.1 bottom fast npt igbt characteristics absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 25 i c continuous collector current t c = 80c 15 i cm pulsed collector current t c = 25c 60 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 140 w rbsoa reverse bias safe operating area t j = 125c 30a@1150v electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 500 a t j = 25c 2.5 3.2 3.7 v ce(sat) collector emitter saturation voltage v ge =15v i c = 15a t j = 125c 4.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 4 6 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na
APTGV15H120T3G APTGV15H120T3G ? rev 0 june, 2007 www.microsemi.com 4-9 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 1000 c oes output capacitance 150 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 70 pf q g total gate charge 99 q ge gate ? emitter charge 10 q gc gate ? collector charge v ge = 15v v bus = 300v i c =15a 70 nc t d(on) turn-on delay time 60 t r rise time 50 t d(off) turn-off delay time 315 t f fall time inductive switching (25c) v ge = 15v v bus = 400v i c = 15a r g = 33 ? 30 ns t d(on) turn-on delay time 60 t r rise time 50 t d(off) turn-off delay time 356 t f fall time inductive switching (125c) v ge = 15v v bus = 400v i c = 15a r g = 33 ? 40 ns e on turn-on switching energy t j = 125c 2 e off turn-off switching energy v ge = 15v v bus = 400v i c = 15a r g = 33 ? t j = 125c 1 mj r thjc junction to case thermal resistance 0.9 c/w 2.2 bottom diode characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 100 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 15 a i f = 15a 2.8 3.3 i f = 30a 3.4 v f diode forward voltage i f = 15a t j = 125c 2.4 v t j = 25c 240 t rr reverse recovery time t j = 125c 290 ns t j = 25c 260 q rr reverse recovery charge i f = 15a v r = 800v di/dt =200a/s t j = 125c 960 nc r thjc junction to case thermal resistance 2 c/w 3. temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 t: thermistor temperature r t : thermistor value at t
APTGV15H120T3G APTGV15H120T3G ? rev 0 june, 2007 www.microsemi.com 5-9 4. package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150* t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g tj=175c for trench & field stop igbt 5. sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com 6. top switches curves 6.1 top trench + field stop igbt ? typical performance curves output characteristics (v ge =15v) t j =25c t j =125c 0 5 10 15 20 25 30 00.511.522.533.5 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 5 10 15 20 25 30 01234 v ce (v) i c (a) t j = 125c
APTGV15H120T3G APTGV15H120T3G ? rev 0 june, 2007 www.microsemi.com 6-9 transfert characteristics t j =25c t j =25c t j =125c 0 5 10 15 20 25 30 5 6 7 8 9 10 11 12 v ge (v) i c (a) energy losses vs collector current eon eon eoff 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25 30 i c (a) e (mj) v ce = 600v v ge = 15v r g = 62 ? t j = 125c eon eon eoff 0 1 2 3 4 5 0 50 100 150 200 250 300 350 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 15a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 10 20 30 40 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =62 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) 6.2 top fast diode typical performance curves t j =-55c t j =25c t j =125c 0 10 20 30 40 50 012345 v f , anode to cathode voltage (v) i f , forward current (a) forw ard current vs forw ard voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.4 0.8 1.2 1.6 2 2.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration
APTGV15H120T3G APTGV15H120T3G ? rev 0 june, 2007 www.microsemi.com 7-9 7. bottom switches curves 7.1 bottom fast npt igbt typical performance curves output characteristics (v ge =15v) t j =25c t j =125c 0 10 20 30 40 50 012345678 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle output characteristics (v ge =10v) t j =25c t j =125c 0 2 4 6 8 10 12 14 16 00.511.522.533.5 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle transfer characteristics t j =25c t j =125c 0 10 20 30 40 50 60 70 0 2.5 5 7.5 10 12.5 15 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle gate charge v ce =240v v ce =600v v ce =960v 0 2 4 6 8 10 12 14 16 18 0 20 40 60 80 100 120 gate charge (nc) v ge , gate to emitter voltage (v) i c = 15a t j = 25c ic=30a ic=15a ic=7.5a 0 1 2 3 4 5 6 7 8 9 9 10111213141516 v ge , gate to emitter voltage (v) on state voltage vs gate to emitter volt. v ce , collector to emitter voltage (v) t j = 125c 250s pulse test < 0.5% duty cycle ic=30a ic=15a ic=7.5a 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature
APTGV15H120T3G APTGV15H120T3G ? rev 0 june, 2007 www.microsemi.com 8-9 v ge = 15v 50 55 60 65 70 75 0 5 10 15 20 25 30 35 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current v ce = 600v r g = 33 ? v ge =15v, t j =25c v ge =15v, t j =125c 200 250 300 350 400 0 5 10 15 20 25 30 35 i ce , collector to emitter current (a) turn-off delay time vs collector current td(off), turn-off delay time (ns ) v ce = 600v r g = 33 ? v ge =15v 0 40 80 120 160 0 5 10 15 20 25 30 35 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 600v r g = 33 ? t j = 25c t j = 125c 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 600v, v ge = 15v, r g = 33 ? t j =25c, v ge =15v t j =125c, v ge =15v 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 35 i ce , collector to emitter current (a) turn-on energy loss vs collector current eon, turn-on energy loss (mj ) v ce = 600v r g = 33 ? t j = 25c t j = 125c 0 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 35 i ce , collector to emitter current (a) eoff, turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 600v v ge = 15v r g = 33 ? eon, 15a eoff, 15a 0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 gate resistance (ohms) switching energy losses (mj) switching energy losses vs gate resistance v ce = 600v v ge = 15v t j = 125c 0 5 10 15 20 25 30 35 0 400 800 1200 i c , collector current (a) reverse bias safe operating area v ce , collector to emitter voltage (v)
APTGV15H120T3G APTGV15H120T3G ? rev 0 june, 2007 www.microsemi.com 9-9 cies cres coes 10 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration hard switching zcs zvs 0 20 40 60 80 100 120 0 5 10 15 20 25 i c , collector current (a) operating frequency vs collector current fmax, operating frequency (khz ) v ce = 600v d = 50% r g = 33 ? t j = 125c t c = 75c 7.2 bottom diode typical performance curves t j =-55c t j =25c t j =125c 0 10 20 30 40 50 012345 v f , anode to cathode voltage (v) i f , forward current (a) forw ard current vs forw ard voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.4 0.8 1.2 1.6 2 2.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration microsemi reserves the right to change, without notice, the specifications and info rmation contained herein microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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